TT.IV.A

11:00 - 12:30

Advancement in material growth and device technology for GaN-based rf and power devices
SYNOPSIS
TT.IV.A.1	Farid MEDJDOUB CNRS IEMN, Lille, France Towards robust and efficient millimeter-wave high power GaN transistors
TT.IV.A.2	Alessandro CHINI University of Modena and Reggio Emilia Traps related current and RF-gain transients in GaN HEMTs
TT.IV.A.3	Claudio LANZIERI Leonardo SpA, Rome Leonardo GaN Foundry: technological challenges for high performance and reliability device
TT.IV.A.4	Enrico ZANONI University of Padova Reliability physics, failure modes and mechanisms of 0.25 μm and 0.5 μm AlGaN/GaN HEMT, technologies for rf applications
Chair: Enrico ZANONI, University of Padova Co-Chair: Claudio LANZIERI, Leonardo SpA In collaboration with: Leonardo SpA
SYNOPSIS Gallium Nitride (GaN) is the material of choice for current and future application to radiofrequency power transistor, enabling ultimate performance in terms of power added efficiency, power density, linearity. For these reasons, AlGaN/GaN High Electron Mobility Transistors (HEMTs) are being applied to radars, radio links and high frequency wireless communication systems, possibly including future 5G systems. This Symposium will review the state of the art and perspective of power GaN HEMTs for rf application, including materials and devices related aspects, process and production challenges, and reliability.

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