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ORGANIZERS

 

AIRI

 

NanoItaly Associazione

 

CO-ORGANIZERS

 

Atom Sapienza
 Politecnico Torino 120
SNS
Unipalermo
 UNIMORE modificato
magna greciae

BO PR VR UD QUADRATO finale
distretto micronano
Agenzia Spaziale Italiana
FBK BASE
IIT
INSTM
FEDERCHIMICA NEW
Assing 2017
Lfoundry Nuovo 02
ZEISS
Dhitech
DSCTM
dsftm
ENEA pulito
INRiM

NANOFASICI

 

 

 

IN COOPERATION WITH

 

 

 

 

TT.V.G

sveglia 14:00 - 15:30

Gallium Nitride for power and high-frequency electronics
In collaboration with:
CNR-DSFTM
SYNOPSIS
TT.V.G.1

Ferdinando IUCOLANO  CV
STMicroelectronics
RF GaN on Si in ST

TT.V.G.2

Claudio LANZIERI CV
Leonardo spa, Roma
Technological solutions for GaN based Radars

TT.V.G.3

Raffaella CALARCO  CV
Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Growth, structural, optical and electrical properties of (In,Ga)N/GaN short period superlattices and their possible usage in laser diodes and high-power devices

TT.V.G.4

Caroline CHÈZE  CV
Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Advantages of synthesis of III-nitride heterostructures on N-polar substrates for lighting and high-power applications

Chair: Guglielmo FORTUNATO CV, CNR IMM, Roma


Back to 13 September - Afternoon

NANOINNOVATION'S GOT TALENT


call for young researchers
by BRACCO FOUNDATION

 fondazione Bracco

SCIENTIFIC PATRONAGE

 

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INSTITUTIONAL PATRONAGE

 

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INSTITUTIONAL PARTNERS

 

APRE

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Organizing Secretariat

Dr. Cristina Gippa

+ 39 339 771 4107
+ 39 388 1785318

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"All truths are easy to understand once they are discovered, the point is to discover them"

Galileo Galilei


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Jules Verne


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