Microscopy techniques for industrial needs

Semiconductor  products for high-quality market  (automotive, aerospace, security, medical and scientific) imposes a  deep  and  accurate understanding of chemical / physical phenomena,  and  the knowledge of the  potential fault  mechanisms which  modulate the performance and quality of the products.  Metal contaminants presence and  silicon lattice damage  in the  phodo-diodes,   together with the  dangling bonds presence  in the transistor  gate-oxides,   are particularly  important features  to control  in order  to  guarantee the quality and reliability of CMOS Image Sensors. In this session Scanning Capacitance Microscopy (SCM),   NIR Photoluminescence  and Atomic Probe Tomography (APT)   are the techniques  applied and reviewed to  characterize  such critical process features.