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Milano Bicocca 

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UNIMORE Sigillo2015

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FEDERCHIMICA NEW

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TT.IV.A

sveglia 11:00 - 12:30

Advancement in material growth and device technology for GaN-based rf
and power devices
SYNOPSIS
TT.IV.A.1

Farid MEDJDOUB
CNRS IEMN, Lille, France
Towards robust and efficient millimeter-wave high power GaN transistors

TT.IV.A.2 Alessandro CHINI
University of Modena and Reggio Emilia
Traps related current and RF-gain transients in GaN HEMTs
TT.IV.A.3 Claudio LANZIERI
Leonardo SpA, Rome
Leonardo GaN Foundry: technological challenges for high performance and reliability device
TT.IV.A.4 Enrico ZANONI
University of Padova
Reliability physics, failure modes and mechanisms of 0.25 μm and 0.5 μm AlGaN/GaN HEMT, technologies for rf applications
Chair: Enrico ZANONI, University of Padova
Co-Chair: Claudio LANZIERI, Leonardo SpA
In collaboration with: Leonardo SpA

SYNOPSIS


Gallium Nitride (GaN) is the material of choice for current and future application to radiofrequency power transistor, enabling ultimate performance in terms of power added efficiency, power density, linearity. For these reasons, AlGaN/GaN High Electron Mobility Transistors (HEMTs) are being applied to radars, radio links and high frequency wireless communication systems, possibly including future 5G systems. This Symposium will review the state of the art and perspective of power GaN HEMTs for rf application, including materials and devices related aspects, process and production challenges, and reliability.


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