TS.II.C
| Nano-characterization |
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| The nano characteristics of materials used in CMOS electronics industry plays an important role for designing the devices performances and guaranteeing the expected functionality; among these silicon strain is one key feature since it modulates either the mobility performances and junction leakages. To characterize the Si strain on nano scaled design test structures and measure the expected strain values obtained in the production process, nano-Raman and electron diffraction techniques have been used. Similarly the I-V characterization of single transistors or junctions in the live die has been explored with nano-probing technique. | Sep 21 11:30 13:00 |
